Nanoscale transistors : (Record no. 92597)

MARC details
000 -LEADER
fixed length control field 01888nam a22002417a 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20241111100746.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 241106b2006 |||||||| |||| 00| 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9780387280028
082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.3815 LUN-M
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Lundstrom, Mark
245 ## - TITLE STATEMENT
Title Nanoscale transistors :
Remainder of title device physics, modeling and simulation /
Statement of responsibility, etc. Mark Lundstrom and Jing Guo
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc. USA
Name of publisher, distributor, etc. Springer
Date of publication, distribution, etc. 2006
300 ## - PHYSICAL DESCRIPTION
Extent 217 p.
365 ## - TRADE PRICE
Price type code EUR
Price amount 99.99
500 ## - GENERAL NOTE
General note Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Electronics
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Metal oxide semiconductor field-effect transistors
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Mathematical models
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanotechnology
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Technology and Eengineering
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Electronics Transistors
700 ## - ADDED ENTRY--PERSONAL NAME
Personal name Guo, Jing
952 ## - LOCATION AND ITEM INFORMATION (KOHA)
Withdrawn status
Holdings
Lost status Source of classification or shelving scheme Damaged status Not for loan Collection code Home library Current library Shelving location Date acquired Total Checkouts Full call number Barcode Date last seen Date last checked out Price effective from Koha item type
  Dewey Decimal Classification     621 BITS Pilani Hyderabad BITS Pilani Hyderabad General Stack (For lending) 06/11/2024 1 621.3815 LUN-M 49014 17/02/2025 30/01/2025 06/11/2024 Books
An institution deemed to be a University Estd. Vide Sec.3 of the UGC
Act,1956 under notification # F.12-23/63.U-2 of Jun 18,1964

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