Nanoscale transistors : (Record no. 92597)
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000 -LEADER | |
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fixed length control field | 01888nam a22002417a 4500 |
005 - DATE AND TIME OF LATEST TRANSACTION | |
control field | 20241111100746.0 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
fixed length control field | 241106b2006 |||||||| |||| 00| 0 eng d |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
International Standard Book Number | 9780387280028 |
082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER | |
Classification number | 621.3815 LUN-M |
100 ## - MAIN ENTRY--PERSONAL NAME | |
Personal name | Lundstrom, Mark |
245 ## - TITLE STATEMENT | |
Title | Nanoscale transistors : |
Remainder of title | device physics, modeling and simulation / |
Statement of responsibility, etc. | Mark Lundstrom and Jing Guo |
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT) | |
Place of publication, distribution, etc. | USA |
Name of publisher, distributor, etc. | Springer |
Date of publication, distribution, etc. | 2006 |
300 ## - PHYSICAL DESCRIPTION | |
Extent | 217 p. |
365 ## - TRADE PRICE | |
Price type code | EUR |
Price amount | 99.99 |
500 ## - GENERAL NOTE | |
General note | Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. New kinds of transistors and other devices are also being explored. Nanoscale MOSFET engineering continues, however, to be dominated by concepts and approaches originally developed to treat microscale devices. To push MOSFETs to their limits and to explore devices that may complement or even supplant them, a clear understanding of device physics at the nano/molecular scale will be essential. Our objective is to provide engineers and scientists with that understandin- not only of nano-devices, but also of the considerations that ultimately determine system performance. It is likely that nanoelectronics will involve much more than making smaller and different transistors, but nanoscale transistors provides a specific, clear context in which to address some broad issues and is, therefore, our focus in this monograph. |
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Electronics |
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Metal oxide semiconductor field-effect transistors |
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Mathematical models |
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Nanotechnology |
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Technology and Eengineering |
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM | |
Topical term or geographic name as entry element | Electronics Transistors |
700 ## - ADDED ENTRY--PERSONAL NAME | |
Personal name | Guo, Jing |
952 ## - LOCATION AND ITEM INFORMATION (KOHA) | |
Withdrawn status |
Lost status | Source of classification or shelving scheme | Damaged status | Not for loan | Collection code | Home library | Current library | Shelving location | Date acquired | Total Checkouts | Full call number | Barcode | Date last seen | Date last checked out | Price effective from | Koha item type |
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Dewey Decimal Classification | 621 | BITS Pilani Hyderabad | BITS Pilani Hyderabad | General Stack (For lending) | 06/11/2024 | 1 | 621.3815 LUN-M | 49014 | 17/02/2025 | 30/01/2025 | 06/11/2024 | Books |