TY  - BOOK
AU  - Oda, Shunri
AU  - Oda,Shunri
AU  - Ferry,David K.
TI  - Nanoscale silicon devices
SN  - 9781482228670
AV  - TK7875 .N39 2016
U1  - 621.38152 ODA-S 23
PY  - 2016///
CY  - London
PB  - CRC Press
KW  - Nanoelectromechanical systems
KW  - Nanotechnology
KW  - Silicon crystals
KW  - Electric properties
N1  - Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption.

This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI); Includes bibliographical references and index; Physics of silicon nanodevices; David K. Ferry and Richard Akis --; Tri-gate transistors; Suman Datta --; Variability in scaled MOSFETs; Toshiro Hiramoto --; Self-heating effects in nanoscale 3D MOSFETs; Tsunaki Takahashi and Ken Uchida --; Spintronics-based nonvolatile computing systems; Tetsuo Endoh --; NEMS devices; Yoshishige Tsuchiya and Hiroshi Mizuta --; Tunnel FETs for more energy-efficient computing; Adrian M. Ionescu --; Dopant-atom silicon tunneling nanodevices; Daniel Moraru and Michiharu Tabe --; Single-electron transfer in Si nanowires; Akira Fujiwara, Gento Yamahata, and Katsuhiko Nishiguchi --; Coupled Si quantum dots for spin-based qubits; Tetsuo Kodera and Shunri Oda --; Potential of nonvolatile magnetoelectric devices for spintronic applications; Peter A. Dowben, Christian Binek, and Dmitri E. Nikonov
ER  -