000			02178cam a22003617i 4500
999			_c38766 _d38766
001			19258396
005			20190124191744.0
008			160901t20162016fluaf b 001 0 eng d
010			_a 2016448121
020			_a9781482228670
020			_a9781138749320
020			_a148222867X
035			_a(OCoLC)ocn934674803
040			_aYDXCP _beng _cYDXCP _erda _dBDX _dCDX _dOCLCQ _dOCLCO _dTKN _dVGM _dOCLCF _dBTCTA _dDLC
042			_alccopycat
050	0	0	_aTK7875 _b.N39 2016
082	0	4	_a621.38152 ODA-S _223
100			_aOda, Shunri
245	0	0	_aNanoscale silicon devices / _cedited by Shunri Oda, David K. Ferry.
260			_aLondon _bCRC Press _c2016
300			_axii, 288 pages, 8 unnumbered pages of plates : _billustrations (some color) ; _c24 cm
365			_aGBP _b50.00
500			_aSmaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI).
504			_aIncludes bibliographical references and index.
505	0	0	_tPhysics of silicon nanodevices / _rDavid K. Ferry and Richard Akis -- _tTri-gate transistors / _rSuman Datta -- _tVariability in scaled MOSFETs / _rToshiro Hiramoto -- _tSelf-heating effects in nanoscale 3D MOSFETs / _rTsunaki Takahashi and Ken Uchida -- _tSpintronics-based nonvolatile computing systems / _rTetsuo Endoh -- _tNEMS devices / _rYoshishige Tsuchiya and Hiroshi Mizuta -- _tTunnel FETs for more energy-efficient computing / _rAdrian M. Ionescu -- _tDopant-atom silicon tunneling nanodevices / _rDaniel Moraru and Michiharu Tabe -- _tSingle-electron transfer in Si nanowires / _rAkira Fujiwara, Gento Yamahata, and Katsuhiko Nishiguchi -- _tCoupled Si quantum dots for spin-based qubits / _rTetsuo Kodera and Shunri Oda -- _tPotential of nonvolatile magnetoelectric devices for spintronic applications / _rPeter A. Dowben, Christian Binek, and Dmitri E. Nikonov.
650		0	_aNanoelectromechanical systems.
650		0	_aNanotechnology.
650		0	_aSilicon crystals _xElectric properties.
700	1		_aOda, Shunri, _eeditor.
700	1		_aFerry, David K., _eeditor.
906			_a7 _bcbc _ccopycat _d2 _encip _f20 _gy-gencatlg
955			_brk15 2016-09-01 z-processor _irk06 2016-09-06 to BCCD