Nanoscale silicon devices /
Oda, Shunri
Nanoscale silicon devices / edited by Shunri Oda, David K. Ferry. - London CRC Press 2016 - xii, 288 pages, 8 unnumbered pages of plates : illustrations (some color) ; 24 cm
Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption.
This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI).
Includes bibliographical references and index.
Physics of silicon nanodevices / Tri-gate transistors / Variability in scaled MOSFETs / Self-heating effects in nanoscale 3D MOSFETs / Spintronics-based nonvolatile computing systems / NEMS devices / Tunnel FETs for more energy-efficient computing / Dopant-atom silicon tunneling nanodevices / Single-electron transfer in Si nanowires / Coupled Si quantum dots for spin-based qubits / Potential of nonvolatile magnetoelectric devices for spintronic applications / David K. Ferry and Richard Akis -- Suman Datta -- Toshiro Hiramoto -- Tsunaki Takahashi and Ken Uchida -- Tetsuo Endoh -- Yoshishige Tsuchiya and Hiroshi Mizuta -- Adrian M. Ionescu -- Daniel Moraru and Michiharu Tabe -- Akira Fujiwara, Gento Yamahata, and Katsuhiko Nishiguchi -- Tetsuo Kodera and Shunri Oda -- Peter A. Dowben, Christian Binek, and Dmitri E. Nikonov.
9781482228670 9781138749320 148222867X
2016448121
Nanoelectromechanical systems.
Nanotechnology.
Silicon crystals--Electric properties.
TK7875 / .N39 2016
621.38152 ODA-S
Nanoscale silicon devices / edited by Shunri Oda, David K. Ferry. - London CRC Press 2016 - xii, 288 pages, 8 unnumbered pages of plates : illustrations (some color) ; 24 cm
Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption.
This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI).
Includes bibliographical references and index.
Physics of silicon nanodevices / Tri-gate transistors / Variability in scaled MOSFETs / Self-heating effects in nanoscale 3D MOSFETs / Spintronics-based nonvolatile computing systems / NEMS devices / Tunnel FETs for more energy-efficient computing / Dopant-atom silicon tunneling nanodevices / Single-electron transfer in Si nanowires / Coupled Si quantum dots for spin-based qubits / Potential of nonvolatile magnetoelectric devices for spintronic applications / David K. Ferry and Richard Akis -- Suman Datta -- Toshiro Hiramoto -- Tsunaki Takahashi and Ken Uchida -- Tetsuo Endoh -- Yoshishige Tsuchiya and Hiroshi Mizuta -- Adrian M. Ionescu -- Daniel Moraru and Michiharu Tabe -- Akira Fujiwara, Gento Yamahata, and Katsuhiko Nishiguchi -- Tetsuo Kodera and Shunri Oda -- Peter A. Dowben, Christian Binek, and Dmitri E. Nikonov.
9781482228670 9781138749320 148222867X
2016448121
Nanoelectromechanical systems.
Nanotechnology.
Silicon crystals--Electric properties.
TK7875 / .N39 2016
621.38152 ODA-S