Nanoscale silicon devices / (Record no. 38766)

MARC details
000 -LEADER
fixed length control field 02178cam a22003617i 4500
001 - CONTROL NUMBER
control field 19258396
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20190124191744.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 160901t20162016fluaf b 001 0 eng d
010 ## - LIBRARY OF CONGRESS CONTROL NUMBER
LC control number 2016448121
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781482228670
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781138749320
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 148222867X
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)ocn934674803
040 ## - CATALOGING SOURCE
Original cataloging agency YDXCP
Language of cataloging eng
Transcribing agency YDXCP
Description conventions rda
Modifying agency BDX
-- CDX
-- OCLCQ
-- OCLCO
-- TKN
-- VGM
-- OCLCF
-- BTCTA
-- DLC
042 ## - AUTHENTICATION CODE
Authentication code lccopycat
050 00 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7875
Item number .N39 2016
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.38152 ODA-S
Edition number 23
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Oda, Shunri
245 00 - TITLE STATEMENT
Title Nanoscale silicon devices /
Statement of responsibility, etc. edited by Shunri Oda, David K. Ferry.
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc. London
Name of publisher, distributor, etc. CRC Press
Date of publication, distribution, etc. 2016
300 ## - PHYSICAL DESCRIPTION
Extent xii, 288 pages, 8 unnumbered pages of plates :
Other physical details illustrations (some color) ;
Dimensions 24 cm
365 ## - TRADE PRICE
Price type code GBP
Price amount 50.00
500 ## - GENERAL NOTE
General note Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption.<br/><br/>This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI).
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Includes bibliographical references and index.
505 00 - FORMATTED CONTENTS NOTE
Title Physics of silicon nanodevices /
Statement of responsibility David K. Ferry and Richard Akis --
Title Tri-gate transistors /
Statement of responsibility Suman Datta --
Title Variability in scaled MOSFETs /
Statement of responsibility Toshiro Hiramoto --
Title Self-heating effects in nanoscale 3D MOSFETs /
Statement of responsibility Tsunaki Takahashi and Ken Uchida --
Title Spintronics-based nonvolatile computing systems /
Statement of responsibility Tetsuo Endoh --
Title NEMS devices /
Statement of responsibility Yoshishige Tsuchiya and Hiroshi Mizuta --
Title Tunnel FETs for more energy-efficient computing /
Statement of responsibility Adrian M. Ionescu --
Title Dopant-atom silicon tunneling nanodevices /
Statement of responsibility Daniel Moraru and Michiharu Tabe --
Title Single-electron transfer in Si nanowires /
Statement of responsibility Akira Fujiwara, Gento Yamahata, and Katsuhiko Nishiguchi --
Title Coupled Si quantum dots for spin-based qubits /
Statement of responsibility Tetsuo Kodera and Shunri Oda --
Title Potential of nonvolatile magnetoelectric devices for spintronic applications /
Statement of responsibility Peter A. Dowben, Christian Binek, and Dmitri E. Nikonov.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanoelectromechanical systems.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanotechnology.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Silicon crystals
General subdivision Electric properties.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Oda, Shunri,
Relator term editor.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Ferry, David K.,
Relator term editor.
906 ## - LOCAL DATA ELEMENT F, LDF (RLIN)
a 7
b cbc
c copycat
d 2
e ncip
f 20
g y-gencatlg
955 ## - COPY-LEVEL INFORMATION (RLIN)
Book number/undivided call number, CCAL (RLIN) rk15 2016-09-01 z-processor
Copy status, CST (RLIN) rk06 2016-09-06 to BCCD
952 ## - LOCATION AND ITEM INFORMATION (KOHA)
Withdrawn status
Holdings
Lost status Source of classification or shelving scheme Damaged status Not for loan Collection code Current library Shelving location Date acquired Total Checkouts Full call number Barcode Date last seen Date last checked out Koha item type
  Dewey Decimal Classification     621 BITS Pilani Hyderabad General Stack (For lending) 24/01/2019 3 621.38152 ODA-S 37502 13/07/2024 10/02/2020 Books
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